- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371553 > 2SK3132 (Toshiba Corporation) Shrink Tubing; Tubing Size Diameter:0.375"; Wall Thickness Recovered Nominal:0.05"; Inner Diameter Max Recovered:0.130"; Expanded Inner Diameter:0.375"; Material:Polyolefin PDF資料下載
參數(shù)資料
| 型號： | 2SK3132 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:0.375"; Wall Thickness Recovered Nominal:0.05"; Inner Diameter Max Recovered:0.130"; Expanded Inner Diameter:0.375"; Material:Polyolefin |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 312K |
| 代理商： | 2SK3132 |
2SK3132
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3132
Chopper Regulator DC
DC Converter, and Motor Drive
Applications
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
Enhancement
mode
: V
th
= 2.4~3.4 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
: R
DS (ON)
= 0.07
(typ.)
: |Y
fs
| = 33 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
50
A
DCDrain current
Pulse (Note 1)
I
DP
200
A
Drain power dissipation (Tc
=
25°C)
P
D
250
W
Single pulse avalanche energy
(Note 2)
E
AS
525
mJ
Avalanche current
I
AR
50
A
Repetitive avalanche energy (Note 3)
E
AR
25
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.5
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
35.7
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 357 μH, R
G
= 25
, I
AR
= 50 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3176 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK3179 | N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK3192 | Silicon N-channel power MOSFET |
| 2SK3205 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3216-01 | N-CHANNEL SILICON POWER MOS-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3132_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3133 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3133L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。