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參數(shù)資料
| 型號： | 2SK3131 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-21F1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 425K |
| 代理商： | 2SK3131 |
2SK3131
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±100 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
—
3.4
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
—
0.085
0.11
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
15
35
—
S
Input capacitance
Ciss
—
11000
—
Reverse transfer capacitance
Crss
—
2100
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
4200
—
pF
Rise time
tr
—
105
—
Turnon time
ton
—
160
—
Fall time
tf
—
65
—
Switching time
Turnoff time
toff
—
245
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
280
—
Gatesource charge
Qgs
—
150
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 50 A
—
130
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
50
A
Pulse drain reverse current
(Note 1)
IDRP
—
200
A
Forward voltage (diode)
VDSF
VDR = 25 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
105
—
ns
Reverse recovery charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
380
—
nC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK3131
TOSHIBA
JAPAN
Lot No.
Note 4
Part No. (or abbreviation code)
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| 2SK3140 | 60 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3131(Q) | 功能描述:MOSFET N-ch 500V 50A 0.140 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3131_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3131_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132 | 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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