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參數(shù)資料
| 型號： | 2SK3127(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 2SK3127(2-10S1B) |
2SK3127
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
9.5
12
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
19
40
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
2300
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
380
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1100
pF
Rise time
tr
12
Turn-on time
ton
25
Fall time
tf
75
Switching time
Turn-off time
toff
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
VDD 24 V, VGS = 10 V, ID = 45 A
66
nC
Gate-source charge
Qgs
VDD 24 V, VGS = 10 V, ID = 45 A
45
nC
Gate-drain (“miller”) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 45 A
21
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
45
A
Pulse drain reverse current
(Note 1)
IDRP
135
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
150
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
270
nC
Marking
Note 5: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3127
Lot No.
Note 5
Product No. (or abbreviation code)
0 V
10 V
VGS
R
L
=0.6
Ω
VDD 15 V
ID = 25 A
VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3127-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3128 | 功能描述:MOSFET N-CH 30V 60A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3128(Q) | 功能描述:MOSFET MOSFET N-Ch 30V 60A Rdson 0.012 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3128_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK3128_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
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