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參數(shù)資料
| 型號(hào)： | 2SK3114B-S17-AY |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, MP-45F, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 2SK3114B-S17-AY |
Data Sheet D18062EJ2V0DS
5
2SK3114B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS(
on)
-Drain
to
Source
On-state
Resistance
-
Ω
0
1
2
3
4
5
-50
0
50
100
150
ID = 4.0 A
2.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature - °C
I
SD
–
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
00.511.5
Pulsed
VGS = 10 V
0 V
VSD – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
1
10
100
1000
10000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
C iss
C oss
C rss
VDS - Drain to Source Voltage - V
t
d(
on)
,t
r,
t
d(
off)
,t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
tr
td(off)
td(on)
tf
VDD = 150 V
VGS = 10 V
RG = 10
Ω
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
trr
–
Reverse
Recovery
Time
-ns
10
100
1000
0.1
1
10
di/dt = 50 A/
μs
VGS = 0 V
ID - Drain Current - A
V
DS
–
Drain
to
Source
Voltage
-
V
0
100
200
300
400
500
600
700
02
46
8
10
12
14
0
1
2
3
4
5
6
7
8
9
10
ID = 4.0 A
VDS
VGS
VDD = 450 V
300 V
150 V
QG – Gate Chage - nC
V
GS
–
Gate
to
Source
Voltage
-
V
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全稱:NEC 功能描述:7.5A600V |
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