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參數(shù)資料
| 型號： | 2SK3114 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 92K |
| 代理商： | 2SK3114 |
Data Sheet D13337EJ2V0DS
4
2SK3114
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
10
40
20
30
5
10
0
6 V
V
GS
= 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
15
10
5
0
100
10
1.0
0.1
V
DS
= 10V
Pulsed
Tch = 125
C
75
C
25
C
-25
C
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
-50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
|
f
10
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= -25
C
25
C
75
C
125
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3.0
10
2.0
V
GS
- Gate to Source Voltage - V
R
D
-
W
1.0
0
5
15
0
I
D
= 4.0 A
Pulsed
2.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
1.0
10
100
I
D
- Drain Current - A
R
D
W
2.0
0
3.0
V
GS
= 10 V
Pulsed
V
GS
= 20 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3115 | Switching N-channel power MOS FET industrial use |
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
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