參數(shù)資料
型號: 2SK3113B
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 3/8頁
文件大?。?/td> 195K
代理商: 2SK3113B
Data Sheet D18061EJ3V0DS
3
2SK3113B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
d
0
40
T
ch
- Channel Temperature -
°
C
20
60
100
140
80
120
160
100
80
60
40
20
0
P
T
0
0
80
20
40
T
C
- Case Temperature -
°
C
60
100
140
120
160
40
30
20
10
5
15
25
35
FORWARD BIAS SAFE OPERATING AREA
I
D
0.01
0.1
1
10
100
1
10
100
1000
100
μ
s
1 ms
10 ms
I
D(pulse)
I
D(DC)
R
DS(on)
Limited
(at V
GS
= 10 V)
PW = 10
μ
s
Power Dissipation Limited
Tc = 25°C, Single pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 125°C/W
R
th(ch-C)
= 6.25°C/W
Single pulse
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
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2SK3113B(1)-S27-AY MOS FIELD EFFECT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3113B(1)-S27-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK3113B-S15 制造商:Renesas Electronics Corporation 功能描述:
2SK3113B-S15-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK3113B-ZK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:REN2SK3113B-ZK-E1-AY SWITCHING N-CHANNEL
2SK3113B-ZK-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR