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參數(shù)資料
| 型號(hào)： | 2SK3113B-ZK-E2-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | 2SK3113B-ZK-E2-AY |
Data Sheet D18061EJ3V0DS
2
2SK3113B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
0.5
0.9
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 1.0 A
3.2
4.4
Ω
Input Capacitance
C
iss
V
DS
= 10 V
290
pF
Output Capacitance
C
oss
V
GS
= 0 V
75
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
7
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 1.0 A
10.5
ns
Rise Time
t
r
V
GS
= 10 V
4.8
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
15.8
ns
Fall Time
t
f
R
L
= 10
Ω
10.5
ns
Total Gate Charge
Q
G
V
DD
= 450 V
7.9
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
2.7
nC
Gate to Drain Charge
Q
GD
I
D
= 2.0 A
3.2
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
I
F
= 2.0 A, V
GS
= 0 V
190
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
500
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
Ω
50
Ω
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
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