參數(shù)資料
型號: 2SK3113B-ZK-E1-AY
元件分類: 小信號晶體管
英文描述: 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 196K
代理商: 2SK3113B-ZK-E1-AY
Data Sheet D18061EJ3V0DS
4
2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Cur
rent
-
A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
VGS = 10 V
Pulsed
8 V
VDS - Drain to Source Voltage - V
I
D
-Dr
ain
Curr
ent
-
A
0.01
0.1
1
10
100
0
5
10
15
20
25
30
VDS = 10 V
Pulsed
Tch = 125°C
75°C
25°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(
off
)-
Gate
Cu
t-off
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|
-Forward
Tr
ans
fe
rAdmittance
-
S
0.01
0.1
1
10
0.01
0.1
1
10
VDS = 10 V
Pulsed
Tch =
25°C
25°C
75°C
125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS
(o
n)
-Drai
nto
Source
On-stat
eRes
ista
nce
-
Ω
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
5
10
15
20
25
ID = 2.0 A
1.0 A
Pulsed
VGS – Gate to Source Voltage - V
R
DS
(o
n)
-Drai
nto
Source
On-stat
eRes
ista
nce
-
Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.01
0.1
1
10
VGS = 10 V
20 V
Pulsed
ID - Drain Current - A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3113B-ZK-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK3113-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3113-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO252 Bulk
2SK3114 制造商:Renesas Electronics Corporation 功能描述:
2SK3114-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk