參數(shù)資料
型號(hào): 2SK3113B-S15-AY
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
封裝: LEAD FREE, TO-251, MP-3-A, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 196K
代理商: 2SK3113B-S15-AY
Data Sheet D18061EJ3V0DS
2
2SK3113B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 1.0 A
0.5
0.9
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 1.0 A
3.2
4.4
Ω
Input Capacitance
Ciss
VDS = 10 V
290
pF
Output Capacitance
Coss
VGS = 0 V
75
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 1.0 A
10.5
ns
Rise Time
tr
VGS = 10 V
4.8
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
15.8
ns
Fall Time
tf
RL = 10
Ω
10.5
ns
Total Gate Charge
QG
VDD = 450 V
7.9
nC
Gate to Source Charge
QGS
VGS = 10 V
2.7
nC
Gate to Drain Charge
QGD
ID = 2.0 A
3.2
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 2.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 2.0 A, VGS = 0 V
190
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
500
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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