參數(shù)資料
型號(hào): 2SK3112
元件分類: JFETs
英文描述: 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-25, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 79K
代理商: 2SK3112
Data Sheet D13335EJ1V0DS
2
2SK3112
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
4.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 13 A
6.0
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 13 A
76
110
m
Input Capacitance
Ciss
VDS = 10 V
1600
pF
Output Capacitance
Coss
VGS = 0 V
430
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
280
pF
Turn-on Delay Time
td(on)
VDD = 100 V , ID = 13 A
35
ns
Rise Time
tr
VGS = 10 V
140
ns
Turn-off Delay Time
td(off)
RG = 10
110
ns
Fall Time
tf
70
ns
Total Gate Charge
QG
VDD = 160 V
60
nC
Gate to Source Charge
QGS
VGS = 10 V
11
nC
Gate to Drain Charge
QGD
ID = 25 A
40
nC
Body Diode Forward Voltage
VF(S-D)
IF = 25 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 25 A, VGS = 0 V
300
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s1.8
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20 V
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3112-AZ 制造商:Renesas Electronics 功能描述:Nch 200V 25A 110m@10V TO220AB Bulk
2SK3112S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA
2SK3112-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-Z 制造商:Renesas Electronics Corporation 功能描述:
2SK3112ZJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AB