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參數(shù)資料
| 型號： | 2SK3112-AZ |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 209K |
| 代理商： | 2SK3112-AZ |
Data Sheet D13335EJ1V0DS
3
2SK3112
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
20
25
30
10
20
30
40
50
60
70
80
015
0
510
VGS = 10 V
Pulsed
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
150
50
100
5.0
4.0
3.0
2.0
1.0
25
75
125
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
08
16
20
412
ID = 25 A
13 A
5 A
0.5
0.4
0.3
0.2
0.1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
0.6
0.4
0.3
0.1
10
100
0.1
0
1
0.2
0.5
VGS = 10 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
ID- Drain Current - A
1
10
100
VDS = 10 V
Pulsed
Tch =
25C
75C
125C
0.01
0.1
100
0.01
0.1
1000
100
10
1
0.1
0.01
0.001
0.0001
02468
10
12
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
VGS - Gate to Source Voltage - V
Tch = 125C
75C
25C
-
25C
VDS = 10 V
Pulsed
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3112S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA |
| 2SK3112-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3112-Z | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3112ZJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AB |
| 2SK3112-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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