參數(shù)資料
型號: 2SK3112-AZ
元件分類: JFETs
英文描述: 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-25, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 79K
代理商: 2SK3112-AZ
Data Sheet D13335EJ1V0DS
4
2SK3112
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
0
0.5
1.0
1.5
VGS = 10 V
0 V
Pulsed
100
10
1
0.1
0.01
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
10000
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
0.1
10
1
10
100
1
1000
di/dt = 50 A/
s
VGS = 0 V
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 100 V
VGS = 10 V
RG = 10
td(off)
td(on)
tf
tr
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
3040
5060
70
VGS
VDS
240
200
160
120
80
40
0
12
10
8
6
4
2
0
ID = 25 A
VDD = 160 V
100 V
40 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
m
0
100
50
Tch - Channel Temperature - C
200
150
100
50
0
VGS = 10 V
Pulsed
13 A
ID = 25 A
相關(guān)PDF資料
PDF描述
2SK3112 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3112S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA
2SK3112-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-Z 制造商:Renesas Electronics Corporation 功能描述:
2SK3112ZJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AB
2SK3112-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE