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參數(shù)資料
| 型號： | 2SK3110-AZ |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 72K |
| 代理商： | 2SK3110-AZ |
Data Sheet D13333EJ2V0DS
2
2SK3110
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
IDSS
VDS = 200 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
4.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 7.0 A
3.0
S
Drain to Source On-state Resistance RDS(on)
VGS = 10 V, ID = 7.0 A
120
180
m
Input Capacitance
Ciss
VDS = 10 V
1000
pF
Output Capacitance
Coss
VGS = 0 V
300
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
150
pF
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 7.0 A
25
ns
Rise Time
tr
VGS(on) = 10 V
70
ns
Turn-off Delay Time
td(off)
RG = 10
80
ns
Fall Time
tf
40
ns
Total Gate Charge
QG
VDD = 160 V
40
nC
Gate to Source Charge
QGS
VGS = 10 V
7
nC
Gate to Drain Charge
QGD
ID = 14 A
25
nC
Diode Forward Voltage
VF(S-D)
IF = 14 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 14 A, VGS = 0 V
300
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
1.5
C
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
RG = 10
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK3111 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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