參數(shù)資料
型號: 2SK3089(2-10S2B)
元件分類: JFETs
英文描述: 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 2-10S2B
文件頁數(shù): 2/3頁
文件大?。?/td> 158K
代理商: 2SK3089(2-10S2B)
2SK3089
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 20 A
25
30
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 20 A
10
20
S
Input capacitance
Ciss
920
Reverse transfer capacitance
Crss
290
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
420
pF
Rise time
tr
10
Turnon time
ton
17
Fall time
tf
40
Switching time
Turnoff time
toff
80
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
23
Gatesource charge
Qgs
15
Gatedrain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 40 A
8
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
40
A
Pulse drain reverse current
(Note 1)
IDRP
80
A
Forward voltage (diode)
VDSF
IDR = 40 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
80
ns
Reverse recovery charge
Qrr
IDR = 40 A, VGS = 0 V
dIDR / dt = 50 A / μs
130
nC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3089
Part No. (or abbreviation code)
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