參數(shù)資料
型號(hào): 2SK3085
元件分類: JFETs
英文描述: 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, 2-10P1B, SC-46, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 165K
代理商: 2SK3085
2SK3085
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate -source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.8 A
1.7
2.2
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1.8 A
2.0
3.0
S
Input capacitance
Ciss
800
Reverse transfer capacitance
Crss
6
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
65
pF
Rise time
tr
15
Turn-on time
ton
50
Fall time
tf
15
Switching time
Turn-off time
toff
85
ns
Total gate charge
Qg
20
Gate-source charge
Qgs
10
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 3.5 A
10
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
3.5
A
Pulse drain reverse current
(Note 1)
IDRP
14
A
Forward voltage (diode)
VDSF
IDR = 3.5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
400
ns
Reverse recovery charge
Qrr
IDR = 3.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2.6
μC
Marking
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 111 Ω
VDD 220 V
ID = 1.8 A
VOUT
50
Ω
Lot No.
Note 4
K3085
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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