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參數(shù)資料
| 型號： | 2SK3079 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-5N1A, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 2SK3079 |
2SK3079
2001-11-20
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Power
PO
33.0
—
dBmW
Drain Efficiency
ηD
40.0
—
%
Power Gain
GP
VDS = 4.8V
Iidle = 800 mA (VGS = adjust)
f = 915MHz, Pi = 26dBmW
ZG = ZL = 50
7.0
—
dB
Threshold Voltage
Vth
VDS = 4.8 V, ID = 0.5 mA
0.30
—
1.30
V
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
—
10
A
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
—
5
A
Load Mismatch
—
VDS = 6.5 V, f = 915 MHz
Pi = 26dBmW
PO = 33.0dBmW (VGS = adjust)
VSWR LOAD 10: 1 all phase
No Degradation
—
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
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