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參數(shù)資料
| 型號： | 2SK3077 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-2K1D, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 182K |
| 代理商： | 2SK3077 |
2SK3077
2004-12-14
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Power
PO
15.0
—
dBmW
Drain Efficiency
ηD
—
20.0
—
%
Power Gain
GP
VDS = 4.8V
Iidle = 43 mA (VGS = adjust)
f = 915 MHz, Pi = 0 dBmW
15.0
—
dB
Threshold Voltage
Vth
VDS = 4.8 V, ID = 0.5 mA
0.25
—
1.25
V
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
—
10
A
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
—
5
A
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3077_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3078A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3078A(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 10V 0.5A 4-Pin (3+Tab) PW-Mini T/R |
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