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參數(shù)資料
| 型號： | 2SK3075 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-5N1A, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 157K |
| 代理商： | 2SK3075 |
2SK3075
2004-12-14
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3075
RF POWER MOSFET FOR VHFAND UHFBAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power
: PO ≥ 7.5W
Power Gain
: GP ≥ 11.7dB
Drain Efficiency
: ηD ≥ 50%
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
25
V
Drain Current
ID
5
A
Drain Power Dissipation
PD*
20
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
45~150
°C
*:
Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
25N1A
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| 2SK3668-ZK | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3669 | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3680-01 | 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3075(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 30V 5A PW-X |
| 2SK3075_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER |
| 2SK3076 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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