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參數(shù)資料
| 型號： | 2SK3070(L) |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SK3070(L) |
2SK3070(L),2SK3070(S)
7
0
0.4
0.8
1.2
1.6
2.0
p
X“
V
= 0, –5 V
GS
5 V
10 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
500
400
300
200
100
25
50
75
100
125
150
0
I
= 50 A
V
= 25 V
duty < 0.1 %
Rg > 50
AP
DD
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Test Circuit
Avalanche Waveform
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3072 | 30 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3077 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3078 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3079A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3079 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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