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參數(shù)資料
| 型號(hào)： | 2SK3069 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK3069 |
2SK3069
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
300
20
1
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Collector
to
Emitter
Voltage
V
(V)
CE
Gate
to
Emitter
Voltage
V
(V)
GE
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 75 A
D
VGS
VDS
V
= 50 V
25 V
10 V
DD
V
= 50 V
25 V
10 V
DD
0.5
5
500
50
V
= 10 V, V
= 30 V
PW = 5
s, duty < 1 %
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3069 | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3070(S) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3070(S) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3070(L) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3072 | 30 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3069-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-262VAR |
| 2SK3070(S) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263VAR |
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