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參數(shù)資料
| 型號(hào)： | 2SK3065T100 |
| 廠(chǎng)商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (60V, 2A) |
| 中文描述： | 小開(kāi)關(guān)（60V的2A號(hào)） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK3065T100 |
2SK3065
Transistors
0.01
10
0.1
10
S
O
D
(
)
DRAIN CURRENT : I
D
(
A)
0.1
1
1
Ta=125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=2.5V
Pulsed
Fig.7 Static Drain-Source On-
State Resistance vs.
Drain Current(
ΙΙ
)
0
20
0
S
O
D
(
)
GATE-SOURCE VOLTAGE : V
GS
(
V)
5
Ta=25
°
C
Pulsed
2A
I
D
=1A
10
15
0.25
0.5
0.75
1
Fig.8 Static Drain-Source On-
State Resistance vs.
Gate-Source Voltage
50
150
100
0
1
S
O
D
(
)
CHANNEL TEMPERATURE : Tch(
°
C)
50
25
0
0.5
25
75
125
2A
I
D
=1A
V
GS
=4V
Pulsed
Fig.9 Static Drain-Source On-
State Resistance vs.
Channel Temperature
0.01
10
0.1
10
F
DRAIN CURRENT : I
D
(
A)
0.1
1
1
V
DS
=10V
Pulsed
Ta=
25
°
C
25
°
C
75
°
C
125
°
C
Fig.10
Forward Trasfer Admitance vs.
Drain Current
0
1.6
0.01
10
R
D
(
SOURCE-DRAIN VOLTAGE : V
SD
(
V)
0.4
1
1.2
V
GS
=4V
Pulsed
0.8
Ta=125
°
C
75
°
C
25
°
C
25
°
C
0.1
Fig.11 Reverse Drain Current vs.
Source-Drain Voltage(
Ι
)
0
1.6
0.01
10
R
D
(
SOURCE-DRAIN VOLTAGE : V
SD
(
V)
0.4
1
1.2
Ta=25
°
C
Pulsed
0.8
0.1
V
GS
=0V
4V
Fig.12 Reverse Drain Current vs.
Source-Drain Voltage(
ΙΙ
)
0
100
1
1000
C
DRAIN-SOURCE VOLTAGE : V
SD
(
V)
100
10
10
V
GS
=0V
f=1MH
Z
Ta=25
°
C
C
oss
C
rss
C
iss
Fig.13 Typical Capacitance vs.
Drain-Source Voltage
0.1
10
10
1000
S
DRAIN CURRENT : I
D
(
A)
100
1
V
DD
30
V
V
GS
=4V
R
G
=10
Ta=25
°
C
Pulsed
t
f
t
d(on)
t
r
t
d(off)
Fig.14 Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
0.1
10
10
1000
R
REVERSE DRAIN CURRENT : I
DR
(
A)
100
1
di/dt=50A/
μ
s
V
GS
=0V
Ta=25
°
C
Pulsed
Fig.15 Reverse Recovery Time vs.
Reverse Drain Current
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