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參數(shù)資料
| 型號： | 2SK30651000 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (60V, 2A) |
| 中文描述： | 小開關(guān)（60V的2A號） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK30651000 |
2SK3065
Transistors
!
Packaging specifications
T100
1000
2SK3065
Type
Package
Code
Basic ordering unit
(pieces)
Taping
!
Electrical characteristic curves
0
25
50
75
100
125
150
175
0
1
2
3
T
D
(
AMBIENT TEMPERATURE : Ta(
°
C)
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
Fig.1 Total Power Dissipation vs.
Case Temperature
100
μ
s
1ms
Pw
=
10ms
DC OPERATION
0.1
1
10
100
0.001
0.1
1
10
D
D
(
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.01
Operating in this
area is limited by
R
DS(on)
Ta
=
25
°
C
Single Pulsed
Fig.2 Maximum Safe Operating Area
0
5
10
0
1
2
D
D
(
DRAIN-SOURCE VOLTAGE : V
DS
(
V)
V
GS
=1.5V
2V
4V
3.5V
3V
2.5V
Ta=25
°
C
Pulsed
Fig.3 Typical Output Characteristics
0
5
4
0.1
1
10
D
D
(
GATE THRESHOLD VOLTAGE : V
GS
(th)(V)
3
2
1
Ta=
25
°
C
25
°
C
75
°
C
125
°
C
V
DS
=10V
Pulsed
Fig.4 Typical Transfer Characteristics
50
150
100
0
1
4
G
G
(
V
CHANNEL TEMPERATURE : Tch(
°
C)
50
25
0
2
3
25
75
125
10mA
I
D
=1mA
V
DS
=10V
Fig.5 Gate Threshold Voltage vs.
Channel Temperature
0.01
10
0.1
10
S
O
D
(
)
DRAIN CURRENT : I
D
(
A)
0.1
1
1
Ta=125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=4V
Pulsed
Fig.6 Static Drain-Source On-
State Resistance vs.
Drain Current(
Ι
)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3065T100 | 功能描述:MOSFET N-CH 60V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| 2SK3067(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin (3+Tab) TO-220(NIS) Bulk |
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