參數(shù)資料
型號(hào): 2SK3061-AZ
元件分類(lèi): JFETs
英文描述: 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 196K
代理商: 2SK3061-AZ
Data Sheet D13100EJ2V0DS
2
2SK3061
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 35 A
20
87
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 35 A
6.3
8.5
m
RDS(on)2
VGS = 4.0 V, ID = 35 A
8.2
12
m
Input Capacitance
Ciss
VDS = 10 V
5200
pF
Output Capacitance
Coss
VGS = 0 V
1300
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
480
pF
Turn-on Delay Time
td(on)
ID = 35 A
75
ns
Rise Time
tr
VGS = 10 V
1150
ns
Turn-off Delay Time
td(off)
VDD = 30 V
360
ns
Fall Time
tf
RG = 10
480
ns
Total Gate Charge
QG
ID = 70 A
95
nC
Gate to Source Charge
QGS
VDD = 48 V
13
nC
Gate to Drain Charge
QGD
VGS = 10 V
30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 70 A, VGS = 0 V
0.97
V
Reverse Recovery Time
trr
IF = 70 A, VGS = 0 V
70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
140
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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