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參數(shù)資料
| 型號(hào)： | 2SK3057-AZ |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 65K |
| 代理商： | 2SK3057-AZ |
Data Sheet D13096EJ2V0DS
2
2SK3057
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 23 A
13
42
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 23 A12
17
m
RDS(on)2
VGS = 4 V, ID = 23 A17
27
m
Input Capacitance
Ciss
VDS = 10 V
2100
pF
Output Capacitance
Coss
VGS = 0 V
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
220
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 23 A35
ns
Rise Time
tr
VGS = 10 V
410
ns
Turn-off Delay Time
td(off)
RG = 10
120
ns
Fall Time
tf
200
ns
Total Gate Charge
QG
VDD = 48 V45
nC
Gate to Source Charge
QGS
VGS = 10 V7.0
nC
Gate to Drain Charge
QGD
ID = 45 A13
nC
Body Diode Forward Voltage
VF(S-D)
IF = 45 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 45 A, VGS = 0 V60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
100
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
RG = 10
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
ID
ton
toff
td(on)
tr
td(off)
tf
10%
5
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK3058 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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| 2SK3058-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3058-Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263ABVAR |
| 2SK3058-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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