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參數(shù)資料
| 型號： | 2SK3021TP-FA |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP-FA, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2SK3021TP-FA |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6230
2SK3021
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2692 No.6230–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2083B
[2SK3021]
Features
Low ON-resistance.
4V drive.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK3021]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
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| 2SK302-YTE85L | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3022 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel Power F-MOSFET |
| 2SK3022(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3022 (Tentative) - N-Channel Power F-MOS FET |
| 2SK302200L | 功能描述:MOSFET N-CH 60V 5A UG-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3023 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3023(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3023 (Tentative) - N-Channel Power F-MOS FET |
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