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參數(shù)資料
| 型號： | 2SK2985 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 424K |
| 代理商： | 2SK2985 |
2SK2985
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
Drainsource breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
40
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
—
2.5
V
VGS = 10 V, ID = 25 A
—
4.5
5.8
Drainsource ON resistance
RDS (ON)
VGS = 4 V, ID = 25 A
—
5.8
10
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
35
70
—
S
Input capacitance
Ciss
—
9300
—
Reverse transfer capacitance
Crss
—
910
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1435
—
pF
Rise time
tr
—
18
—
Turnon time
ton
—
50
—
Fall time
tf
—
110
—
Switching time
Turnoff time
toff
—
480
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
210
—
Gatesource charge
Qgs
—
145
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 45 A
—
65
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
45
A
Pulse drain reverse current
(Note 1)
IDRP
—
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
60
—
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / s
—
50
—
nC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2985
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2985 | 45 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK2991(2-10S2B) | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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