參數(shù)資料
型號: 2SK2980
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 4/9頁
文件大小: 43K
代理商: 2SK2980
2SK2980
4
Main Characteristics
0.1
1
10
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
50
100
150
200
4 V
2.5 V
3
1
0.3
0.1
0.03
0.01
0.3
3
30
10
30
100
100
Ta = 25 °C
10 μs
100 μs
PW=10ms
V = 1.5 V
2 V
1.8 V
Tc = –25°C
75°C
25°C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
Typical Transfer Characteristics
V = 10 V
Pulse Test
Operation in
this area is
limited by R
DS(on)
D
D
Test condition :
When using alumina ceramic board
(12.5 x 20 x 0.7 mm)
Pulse Test
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