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參數(shù)資料
| 型號(hào)： | 2SK2974 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | RF POWER MOS FET(VHF/UHF power amplifiers) |
| 中文描述： | 射頻功率MOS FET（甚高頻/超高頻功率放大器） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SK2974 |
2SK2974
MITSUBISHI RF POWER MOS FET
Nov. ′97
47mm
5mm
5mm
2mm
6mm
3mm
41.5mm
C2
GR40-10
10pF
R1
CR10-562
5600
R2
CR10-510
51
C5
GR40-102
1000pF
C6
GR40-050
5pF
C4
GR40-090
9pF
C7
GR40-270
27pF
C3
10μF,
100pF,10pF
in parallel
C8
10μF,
1000pF,10pF
in parallel
C9
GR40-010
1pF
C10
GR40-102
1000pF
L1
4Turns AWG#26,
φ
1.1
Enameled wire(mm)
C11
GR40-10
10pF
C1
GR40-102
1000pF
V
GG
INPUT
V
DD
OUTPUT
P
O
, add VS. V
DD
DRAIN SUPPLY VOLTAGE V
DD
(V)
2
4
12
10
6
5
8
14
26
0
10
32
4
2
3
6
7
9
P
O
η
add
8
34
50
I
DS
VS. V
GS
V
GS
(V)
0
1
2
3
5
1
2
3
6
4
4
0
0.5
1.5
2.5
3.5
4.5
5
TYPICAL PERFORMANCE DATA
EQUIVALENT CIRCUIT
Note: Board material-glass epoxi substrate
micri strip line width=2.8mm,
ε
r
:4.8,t=1.6mm
I
DS
VS. V
DS
V
DS
(V)
0
2
4
6
10
1
2
3
6
8
4
0
1
3
5
7
9
T
C
=25C
5
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
V
DS
=9.6V
T
C
=25C
7
8
7
8
P
O
, add VS. Pin
INPUT POWER Pin (dBm)
0
10
12
10
6
15
30
14
26
0
40
32
4
2
5
20
25
35
20
40
50
0
70
80
60
30
10
P
O
η
add
8
34
50
32
34
46
52
26
30
54
70
∑
∑
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