參數(shù)資料
型號: 2SK2961
元件分類: 小信號晶體管
英文描述: 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 381K
代理商: 2SK2961
2SK2961
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 1.0 A
0.26
0.38
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1.0 A
0.20
0.27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1.0 A
1.0
2.0
S
Input capacitance
Ciss
170
Reverse transfer capacitance
Crss
25
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
75
pF
Rise time
tr
10
Turnon time
ton
15
Fall time
tf
50
Switching time
Turnoff time
toff
170
ns
Total gate charge (gatesource
plus gatedrain)
Qg
5.8
Gatesource charge
Qgs
4.1
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 2 A
1.7
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse
current
(Note 1)
IDR
2.0
A
Pulse drain reverse current
(Note 1)
IDRP
6.0
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
45
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V, dIDR / dt = 50 A / μs
40.5
nC
Marking
K2961
Lot No.
Note 2
Part No.
(or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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