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參數(shù)資料
| 型號： | 2SK2949(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FL, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 442K |
| 代理商： | 2SK2949(2-10S1B) |
2SK2949
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 400 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
400
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5.0 A
—
0.4
0.55
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5.0 A
4.0
8.0
—
S
Input capacitance
Ciss
—
1340
—
Reverse transfer capacitance
Crss
—
160
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
490
—
pF
Rise time
tr
—
22
—
Turnon time
ton
—
60
—
Fall time
tf
—
32
—
Switching time
Turnoff time
toff
—
140
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
34
—
Gatesource charge
Qgs
—
18
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 320 V, VGS = 10 V, ID = 10 A
—
16
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
350
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
2.6
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2949
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2949(2-10S2B) | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2955-E | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2955 | 0.025 ohm, POWER, FET |
| 2SK2956-E | 50 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2957(S) | 50 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2951-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH200V1ASOT89 |
| 2SK2952 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 400V 8.5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2952(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 400V 8.5A 3-Pin (3+Tab) TO-220(NIS) Bulk |
| 2SK2952(Q,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2952Q | 制造商:Toshiba America Electronic Components 功能描述:"2SK2952 (Q) POWER MOSFET, BULK" |
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