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參數(shù)資料
| 型號： | 2SK2939L-E |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SK2939L-E |
2SK2939(L), 2SK2939(S)
Rev.6.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
80
60
40
20
0
50
100
150
200
100
50
10
20
5
1
2
0.5
0.2
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
12
34
5
50
40
30
20
10
0
2
468
10
3.5 V
4 V
5 V
VGS = 3 V
6 V
4.5 V
10 V
Ta = 25
°C
100
s
PW
=
10
m
s (1shot)
10
s
1 ms
DC
Operation
(Tc
=
25
°C)
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
Operation in
this area is
limited by RDS(on)
Pulse Test
0.1
3
10
0.3
0.5
0.02
0.05
0.01
1
1.0
0.8
0.6
0.4
0.2
0
48
12
16
20
Pulse Test
ID = 20 A
5 A
10 A
100
30
0.2
0.1
VGS = 4 V
10 V
Pulse Test
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|---|---|
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| 2SK2940L-E | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2940S | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2940L | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2940S-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK2943 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 900V TO-220F 制造商:Allegro MicroSystems LLC 功能描述:MOS FET |
| 2SK2943 LF619 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk |
| 2SK2949(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 |
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