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參數(shù)資料
| 型號： | 2SK2939(S) |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SK2939(S) |
2SK2957(L),2SK2957(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
50
A
Drain peak current
I
D(pulse)
Note1
200
A
Body-drain diode reverse drain current
I
DR
50
A
Channel dissipation
Pch
Note2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
—
7.0
10
m
I
D = 25A, VGS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—
1218m
I
D = 25A, VGS = 4V
Note3
Forward transfer admittance
|y
fs|
2545—
S
I
D = 25A, VDS = 10V
Note3
Input capacitance
Ciss
—
2000
—
pF
V
DS = 10V
Output capacitance
Coss
—
1500
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
350
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
20
—
ns
V
GS = 10V, ID = 25A
Rise time
t
r
—
330
—
ns
R
L = 0.4
Turn-off delay time
t
d(off)
—
190
—
ns
Fall time
t
f
—
190
—
ns
Body–drain diode forward voltage
V
DF
—
0.95
—
V
I
F = 50A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
60
—
ns
I
F = 50A, VGS = 0
diF/ dt =50A/
s
Note:
3. Pulse test
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