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參數(shù)資料
| 型號(hào)： | 2SK2938STL-E |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SK2938STL-E |
2SK2938(L), 2SK2938(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
0.10
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
VGS = 4 V
10 V
2, 5 A
10 A
2, 5, 10 A
Pulse Test
0.1
0.3
1
3
10
30
100
50
20
5
10
1
2
0.5
25
°C
Tc = –25
°C
75
°C
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
1000
500
50
100
20
10
200
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
010
20
30
40
50
2000
5000
1000
100
200
500
10
20
50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
20
16
12
8
4
8
1624
3240
0
ID = 25 A
VGS
VDS
VDD = 50 V
25 V
10 V
VDD = 50 V
25 V
10 V
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
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| 2SK2940S | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
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|---|---|
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