參數(shù)資料
型號: 2SK2933
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 5/10頁
文件大小: 51K
代理商: 2SK2933
2SK2933
5
2.0
1.6
1.2
0.8
0.4
0
4
8
12
16
20
5
20
100
1
10
50
2
–40
0
40
80
120
160
0.1 0.2
1
5
20
20
2
5
1
0.5
1.0
0.2
0.5
0.1
0.02
0.01
0.05
0.5
2
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
W
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
W
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
10 A
5 A
I = 20 A
D
10
10
V = 10 V
Pulse Test
25 °C
Tc = –25 °C
75 °C
0.16
0.12
0.08
0.04
0
I = 10 A
D
V = 4 V
10 V
5 A
5 A
20 A 10 A
V = 4 V
10 V
Pulse Test
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