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參數(shù)資料
| 型號(hào)： | 2SK2926L-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 96K |
| 代理商： | 2SK2926L-E |
2SK2926(L), 2SK2926(S)
Rev.2.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
15
A
Drain peak current
ID(pulse)*
1
60
A
Body to drain diode reverse drain current
IDR
15
A
Avalanche current
IAP*
3
15
A
Avalanche energy
EAR*
3
19
mJ
Channel dissipation
Pch*
2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Ta = 25
°C
3. Value at Ta = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
0.042
0.055
ID = 8 A, VGS = 10 V*
4
Static drain to source on state
resistance
RDS(on)
—
0.065
0.11
ID = 8 A, VGS = 4 V*
4
Forward transfer admittance
|yfs|
7
11
—
S
ID = 8 A, VDS = 10 V*
4
Input capacitance
Ciss
—
500
—
pF
Output capacitance
Coss
—
260
—
pF
Reverse transfer capacitance
Crss
—
110
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
Rise time
tr
—
80
—
ns
Turn-off delay time
td(off)
—
100
—
ns
Fall time
tf
—
110
—
ns
VGS = 10 V, ID = 8 A,
RL = 3.75
Body to drain diode forward voltage
VDF
—
1.0
—
V
IF = 15 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
55
—
ns
IF = 15 A, VGS = 0,
diF/ dt = 50 A/
s
Note:
4. Pulse test
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