參數(shù)資料
型號: 2SK2926
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數(shù): 6/10頁
文件大?。?/td> 53K
代理商: 2SK2926
2SK2926(L), 2SK2926(S)
6
0.1
0.5
1
2
10
0.2
Reverse Drain Current I (A)
5
0
10
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8
16
24
32
400
0
1000
300
100
30
10
0.1
0.2
1
5
10
V = 10 V
25 V
50 V
V = 50 V
25 V
10 V
500
200
100
20
50
10
5
2000
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 15A
V
GS
V
DS
3
1
0.5
2
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
20
20
r
V = 10 V, V = 30 V
PW = 5
μ
s, duty < 1 %
tf
d(on)
t
d(off)
t
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
相關PDF資料
PDF描述
2SK2926L Silicon N Channel MOS FET High Speed Power Switching
2SK2926S Silicon N Channel MOS FET High Speed Power Switching
2SK2927 Silicon N Channel MOS FET High Speed Power Switching
2SK2928 Silicon N Channel MOS FET High Speed Power Switching
2SK2929 Silicon N Channel MOS FET High Speed Power Switching
相關代理商/技術參數(shù)
參數(shù)描述
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