參數(shù)資料
型號: 2SK2926(S)
元件分類: JFETs
英文描述: 0.11 ohm, POWER, FET
封裝: DPAK-3
文件頁數(shù): 4/10頁
文件大?。?/td> 53K
代理商: 2SK2926(S)
2SK2926(L), 2SK2926(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
0.042
0.055
I
D = 8A, VGS = 10V*
1
resistance
R
DS(on)
0.065
0.11
I
D = 8A, VGS = 4V*
1
Forward transfer admittance
|y
fs|
7
11
S
I
D = 8A, VDS = 10V*
1
Input capacitance
Ciss
500
pF
V
DS = 10V
Output capacitance
Coss
260
pF
V
GS = 0
Reverse transfer capacitance Crss
110
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = 10V, ID = 8A
Rise time
t
r
80
ns
R
L = 3.75
Turn-off delay time
t
d(off)
100
ns
Fall time
t
f
110
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 15A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
55
ns
I
F = 15A, VGS = 0
diF/ dt = 50A/
s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK2926L-E 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2927 0.15 ohm, POWER, FET, TO-220AB
2SK2927 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2930-E 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2932-E 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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