- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370111 > 2SK2925L (Hitachi,Ltd.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2925L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SK2925L |
2SK2925(L),2SK2925(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
Note4
I
D
= 5A, V
GS
= 4V
Note4
I
D
= 5A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.5
—
2.5
V
Static drain to source on state
—
0.060
0.080
resistance
—
0.095
0.160
Forward transfer admittance
5
8
—
S
Input capacitance
—
350
—
pF
Output capacitance
Coss
—
190
—
pF
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
I
D
= 5A, V
GS
= 10V
R
L
= 6
Rise time
—
55
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
70
—
ns
Body–drain diode forward voltage
—
0.9
—
V
I
F
= 10A, V
GS
= 0
I
= 10A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
50
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2925S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2926 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2926L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2926S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2927 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2925L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925-S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SK2926 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2926L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,15A,42m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。