參數(shù)資料
型號(hào): 2SK2922
元件分類: 小信號(hào)晶體管
英文描述: RF SMALL SIGNAL, FET
封裝: UPAK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 33K
代理商: 2SK2922
2SK2922
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
10
V
Gate to source voltage
V
GSS
±6V
Drain current
I
D
0.7
A
Drain peak current
I
D(pulse)
Note1
1.4
A
Channel dissipation
Pch
Note2
3W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. PW
≤ 10ms, duty cycle ≤ 50 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
I
DSS
100
AV
DS = 10 V, VGS = 0
Gate to source leak current
I
GSS
——
±5.0
AV
GS = ±6 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.4
1.2
V
I
D = 3 mA, VDS = 5 V
Input capacitance
Ciss
27
pF
V
GS = 2 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
13
pF
V
DS = 5 V, VGS = 0, f = 1 MHz
Output Power
Pout
31
dBm
V
DS = 4.7 V, f =836.5 MHz
Pin = 23 dBm
Drain Rational
ηD
57
——%
V
DS = 4.7 V, f =836.5 MHz
Pin = 23 dBm
Note:
1. Marking is “HX”.
相關(guān)PDF資料
PDF描述
2SK2922 RF SMALL SIGNAL, FET
2SK2926(S) 0.11 ohm, POWER, FET
2SK2926L-E 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2927 0.15 ohm, POWER, FET, TO-220AB
2SK2927 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2925L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2925-S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2925STR-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape
2SK2926 制造商:Renesas Electronics Corporation 功能描述:
2SK2926L-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,15A,42m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2)