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參數資料
| 型號： | 2SK2920(2-7J1B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 395K |
| 代理商： | 2SK2920(2-7J1B) |
2SK2920
2009-07-14
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
—
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.56
0.8
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
—
S
Input capacitance
Ciss
—
440
—
Reverse transfer capacitance
Crss
—
35
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
120
—
pF
Rise time
tr
—
15
—
Turn-on time
ton
—
20
—
Fall time
tf
—
15
—
Switching time
Turn-off time
toff
—
60
—
ns
Total gate charge (gate-source
plus gate-drain)
Qg
—
10
—
Gate-source charge
Qgs
—
6
—
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 5 A
—
4
—
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
150
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A/μs
—
0.45
—
μC
Marking
K2920
Lot No.
Note 4
Part No.
(or abbreviation code)
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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