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參數(shù)資料
| 型號(hào)： | 2SK291R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 32K |
| 代理商： | 2SK291R |
2SK291
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–15
V
Gate to source voltage
V
GSO
–15
V
Drain current
I
D
50
mA
Gate current
I
G
5mA
Channel power dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–15
—
V
I
G = –100 A
Gate to source breakdown
voltage
V
(BR)GSO
–15
—
V
I
G = –100 A
Gate cutoff current
I
GSS
—
10
nA
V
GS = –7 V, VDS = 0
Drain current
I
DSS*
1
5
—
50
mA
V
DS = 5 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
—
–3.0
V
DS = 5 V, ID = 100 A
Forward transfer admittance
|y
fs|
25
45
—
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
8.5
—
pF
V
DS = 5 V, VGS = 0, f = 1 MHz
Noise voltage referred to input
e
n
—
1.2
—
nV/
√Hz V
DS = 5 V, ID = 5 mA, Rg = 0,
f = 100 kHz
Note:
1. The 2SK291 is grouped by I
DSS as follows.
Grade
P
Q
R
S
T
I
DSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK291Q | SMALL SIGNAL, FET, TO-92 |
| 2SK291-S | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291-R | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK2955-E | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2920 | 制造商:Toshiba America Electronic Components 功能描述:Part Number Only |
| 2SK2925L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925-S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SK2926 | 制造商:Renesas Electronics Corporation 功能描述: |
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