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參數(shù)資料
| 型號(hào)： | 2SK2912STL-E |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK2912STL-E |
2SK2912(L), 2SK2912(S)
Rev.2.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
40
A
Drain peak current
ID(pulse)*
1
160
A
Body to drain diode reverse drain current
IDR
40
A
Avalanche current
IAP*
3
40
A
Avalanche Energy
EAR*
3
137
mJ
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG = ±100
A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
15
20
m
ID = 20 A, VGS = 10 V*
4
Static drain to source on state
resistance
RDS(on)
—
25
40
m
ID = 20 A, VGS = 4 V*
4
Forward transfer admittance
|yfs|
20
35
—
S
ID = 20 A, VDS = 10 V*
4
Input capacitance
Ciss
—
1500
—
pF
Output capacitance
Coss
—
720
—
pF
Reverse transfer capacitance
Crss
—
200
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
180
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
200
—
ns
ID = 20 A, VGS = 10 V,
RL = 1.5
Body to drain diode forward voltage
VDF
—
0.95
—
V
IF = 40 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
70
—
V
IF = 40 A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
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