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參數(shù)資料
| 型號： | 2SK2889(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 417K |
| 代理商： | 2SK2889(2-10S1B) |
2SK2889
2002-07-22
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
—
0.54
0.75
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3.0
9.0
—
S
Input capacitance
Ciss
—
2040
—
Reverse transfer capacitance
Crss
—
230
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
590
—
pF
Rise time
tr
—
22
—
Turnon time
ton
—
58
—
Fall time
tf
—
36
—
Switching time
Turnoff time
toff
—
190
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
45
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
—
20
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1300
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / s
—
16
—
nC
Marking
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