參數(shù)資料
型號: 2SK2885L
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/7頁
文件大小: 38K
代理商: 2SK2885L
2SK2885(L), 2SK2885(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
30
V
Gate to source voltage
±
20
V
Drain current
45
A
Drain peak current
180
A
Body to drain diode reverse drain current
45
A
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
相關(guān)PDF資料
PDF描述
2SK2885S Silicon N Channel MOS FET High Speed Power Switching
2SK2885 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
2SK2887 Switching(開關(guān)(N溝道MOSFET))
2SK2909 Ultrahigh-Speed Switching Applications
2SK2911 Ultrahigh-Speed Switching Applications
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