- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33492 > 2SK2884(2-10S1B) 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2884(2-10S1B) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FL, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 787K |
| 代理商： | 2SK2884(2-10S1B) |
2SK2884
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 640 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
—
1.9
2.2
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 3 A
1.0
3.8
—
S
Input capacitance
Ciss
—
1080
—
Reverse transfer capacitance
Crss
—
16
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
105
—
pF
Rise time
tr
—
40
—
Turnon time
ton
—
80
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
—
140
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
34
—
Gatesource charge
Qgs
—
16
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
—
18
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.9
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / s
—
7.5
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2884
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2884(2-10S2B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(TO-220FL) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2886 | 45 A, 50 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2889(2-10S2B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2889(2-10S1B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2884-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2886(F) | 制造商:Toshiba 功能描述:Nch 50V 45A 0.02@10V TO220NIS Bulk |
| 2SK2887TL | 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2889(Q) | 制造商:Toshiba 功能描述:Nch 600V 10A 0.75@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 10A TO220FL |
| 2SK2889-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。