參數(shù)資料
型號(hào): 2SK2869S-E
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 75K
代理商: 2SK2869S-E
2SK2869
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
0.033
0.045
I
D = 10A, VGS = 10V*
1
resistance
R
DS(on)
0.055
0.07
I
D = 10A, VGS = 4V*
1
Forward transfer admittance
|y
fs|10
16
S
I
D = 10A, VDS = 10V*
1
Input capacitance
Ciss
740
pF
V
DS = 10V
Output capacitance
Coss
380
pF
V
GS = 0
Reverse transfer capacitance
Crss
140
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
I
D = 10A, VGS = 10V
Rise time
t
r
110
ns
R
L = 3
Turn-off delay time
t
d(off)
105
ns
Fall time
t
f
120
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 20A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—40—
V
I
F = 20A, VGS = 0
diF/ dt = 50A/s
Note:
1. Pulse test
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