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參數(shù)資料
| 型號： | 2SK2858 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 50K |
| 代理商： | 2SK2858 |
Data Sheet D11706EJ2V0DS00
3
2SK2858
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
0
60
80
40
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
2
8
10
4
6
200
100
0
400
300
2.5 V
3 V
3.5 V
V
GS
= 4 V
1.0
2.0
V
GS
- Gate to Sorce Voltage - V
3.0
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
4.0
5.0
T
A
= 125C
75C
25C
25C
V
DS
= 3 V
TRANSFER CHARACTERISTICS
I
D
1
1
10
100
1000
|
f
|
0.01
0.1
0.001
0.0001
V
DS
= 3 V
I
D
- Drain Current - A
T
A
=
25
C
25C
75C
125C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.0001
0.001
I
D
- Drain Current - A
0.1
0.01
R
D
10
15
10
20
5
V
GS
= 2.5 V
T
A
= 125
C
75
25
C
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.001
0.0001
0.1
1
I
D
- Drain Current - A
R
D
0
5
10
15
V
GS
= 4 V
T
A
= 125
C
75
C
25
C
25
C
#
#
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