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參數(shù)資料
| 型號： | 2SK2800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SK2800 |
2SK2800
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note 2
60
V
Gate to source voltage
±
20
V
Drain current
40
A
Drain peak current
Note1
160
A
Body-drain diode reverse drain current
40
A
Avalanche current
Note 3
40
A
Avalanche energy
Note 3
137
mJ
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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