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參數(shù)資料
| 型號： | 2SK2796L-E |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SK2796L-E |
2SK2796(L), 2SK2796(S)
Rev.5.00 Sep 07, 2005 page 5 of 8
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
I D
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
V
= 0, –5 V
GS
10 V
5 V
Pulse Test
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
0
IAP = 5 A
VDD = 25 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25
°C/W, Tc = 25°C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25
°C
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PDF描述 |
|---|---|
| 2SK2796STL-E | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2796STL-E | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2800 | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2826-ZJ | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2826 | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2796S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2796S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SK2796STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2800-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2803 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 450V TO-220F |
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