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參數(shù)資料
| 型號(hào)： | 2SK2791TP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SK2791TP |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6437
2SK2791
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2493 No.6437–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2083B
[2SK2791]
Features
Low ON resistance.
Ultrahigh-speed switching.
4V drive.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2092B
[2SK2791]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
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| 2SK2839 | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2846 | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2857-AZ | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2792 | 功能描述:MOSFET N-CH 600V 4A TO-220FN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2793 | 功能描述:MOSFET N-CH 500V 5A TO-220FN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2796-L(E) | 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 Bulk |
| 2SK2796L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:N-channel MOSFET, 60V,5A,0.12ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SK2796S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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